 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| J105/106/107 N-Channel JFETs Product Summary Part Number J105 J106 J107 VGS(off) (V) -4.5 to -10 -2 to -6 -0.5 to -4.5 rDS(on) Max (W) 3 6 8 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 14 14 14 Features D D D D D Low On-Resistance: J105 < 3 W Fast Switching--tON: 14 ns Low Leakage: 10 pA Low Capacitance: 20 pF Low Insertion Loss Benefits D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Applications D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Description The J105/106/107 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. rDS(on) <3 W is guaranteed for the J105 making this device the lowest of any commercially available JFET. The low cost TO-226AA (TO-92) plastic package is available in a wide range of tape-and-reel options (see Packaging Information). For similar products in TO-206AC (TO-52) packaging, see the U290/291 data sheet. TO-226AA (TO-92) D 1 S 2 G 3 Top View Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70230. Siliconix P-37408--Rev. C, 04-Jul-94 1 J105/106/107 Specificationsa Limits J105 J106 J107 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentc Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID( ff) D(off) rDS(on) VGS(F) IG = -1 mA , VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 25 mA VDS = 5 V, VGS = -10 V TA = 125_C VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V -35 -25 -4.5 500 -10 -25 -2 200 -3 -3 -6 -25 V -0.5 100 -3 -4.5 mA -0.02 -10 -0.01 0.01 5 nA 3 3 3 Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage 3 0.7 6 8 W V Dynamic Common-Source Forward Transconductance c Common-Source Output Conductancec Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V, VGS = 0 V f = 1 MHz VDS = 0 V, VGS = -10 V f = 1 MHz VDG = 10 V, ID = 25 mA f = 1 kHz 120 20 3 55 VDS = 10 V, ID = 25 mA S f = 1 kHz 5 3 160 35 6 160 35 8 160 pF 35 nV Hz W mS Switching Turn-On Turn On Time td(on) tr Turn-Off Time td(off) tf VDD = 1.5 V, VGS(H) = 0 V () See Switching Diagram S S i hi Di 6 8 5 9 NVA ns Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. 2 Siliconix P-37408--Rev. C, 04-Jul-94 J105/106/107 Typical Characteristics 10 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 10 V, VGS = 0 V 2 .0 rDS(on) - Drain-Source On-Resistance ( W ) I DSS - Saturation Drain Current (A) 20 On-Resistance vs. Drain Current TA = 25_C 8 1.6 16 6 rDS IDSS 1.2 12 VGS(off) = -3 V 4 0.8 8 -5 V 4 -8 V 0 10 100 ID - Drain Current (mA) 1000 2 0.4 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 10 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance vs. Temperature ID = 10 mA rDS changes X 0.7%/_C 500 Output Characteristics VGS(off) = -5 V VGS = 0 V -0.5 V 8 I D - Drain Current (mA) 400 6 VGS(off) = -3 V -5 V -8 V 300 -1.0 V -1.5 V -2.0 V 4 200 2 100 -2.5 V -3.0 V 0 -55 0 -35 -15 5 25 45 65 85 105 125 0 2 4 6 8 10 TA - Temperature (_C) VDS - Drain-Source Voltage (V) 20 20 Turn-On Switching tr approximately independent of ID VDD = 1.5 V, RG = 50 W VGS(L) = -10 V Switching Time (ns) Turn-Off Switching td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = -10 V 16 Switching Time (ns) 16 12 tr td(on) @ ID = 30 mA 12 td(off) 8 tf 4 VGS(off) = -3 V 8 4 td(on) @ ID = 10 mA 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) VGS(off) = -8 V 0 0 10 20 30 40 50 ID - Drain Current (mA) Siliconix P-37408--Rev. C, 04-Jul-94 3 J105/106/107 Typical Characteristics (Cont'd) 150 Capacitance vs. Gate-Source Voltage g fs - Forward Transconductance (mS) VDS = 0 V f = 1 MHz 200 100 Transconductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz 120 TA = -55_C 25_C 10 125_C 90 C (pF) Ciss 60 Crss 30 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 1 1 10 ID - Drain Current (mA) 100 20 10 g os - Output Conductance (m S) Output Conductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz 100 Noise Voltage vs. Frequency VDG = 10 V TA = -55_C 25_C 1 125_C e n - Noise Voltage (nV Hz) 10 ID = 10 mA 0.1 1 10 ID - Drain Current (mA) 100 1 10 100 1k f - Frequency (Hz) 10 k 100 k 300 g fs - Forward Transconductance (mS) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 30 100 nA g os - Output Conductance (mS) gfs and gos @ VDS = 10 V VGS = 0 V, f = 1 kHz Gate Leakage Current TA = 125_C 100 mA 10 nA IGSS @ 125_C I G - Gate Leakage 1 nA 100 mA 100 pA TA = 25_C IGSS @ 25_C 25 mA 25 mA 260 24 220 gfs gos 18 180 12 140 6 10 pA 100 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) 0 -10 1 pA 0 4 8 12 16 20 VDG - Drain-Gate Voltage (V) 4 Siliconix P-37408--Rev. C, 04-Jul-94 J105/106/107 Switching Time Test Circuit J105 VGS(L) RL ID(on) *Non-inductive -12V 50 W 28 mA J106 -7V 50 W 27 mA J107 -5V 50 W 26 mA VDD RL OUT Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VGS(H) VGS(L) 1 kW VIN Scope 51 W 51 W Siliconix P-37408--Rev. C, 04-Jul-94 5 |
Price & Availability of J106
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |